List of Selected Journal Papers

1.     Hyeongnam Kim, Jaesun Lee, and Wu Lu, “Trap behavior in AlGaN/GaN HEMTs by post-gate-annealing,” accepted by International Journal of High Speed Electronics and Systems.

2.     Jaesun Lee, Dongmin Liu, Hyeongnam Kim, Michael L. Shuette, Wu Lu, Jeffrey S. Flynn, and Georege R. Brandes, “Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors,” accepted by International Journal of High Speed Electronics and Systems.

3.     Jaesun Lee, Dongmin Liu, Hyeongnam Kim, Michael L. Shuette, Wu Lu, Jeffrey S. Flynn, and Georege R. Brandes “Self-Aligned AlGaN/GaN High Electron Mobility Transistors”, Electronics Letters, 2004 (in press)

4.     Jaesun Lee, Dongmin Liu, Hyeongnam Kim, and Wu Lu, “Post-Processing annealing Effects on Direct Current and Microwave Performace of AlGaN/GaN High Electron Mobility Transistors”, Applied Physics Letters, vol. 85, pp., 2004. (in press)

5.     J. Lee, D. Liu, and W. Lu, “Post Annealing Effects on Device Performance of AlGaN/GaN HFETs”, Solid State Electronics, vol. 48, pp. 1855-1859, 2004.

6.     Z. Lin, H. Kim, J. Lee, and W. Lu, “Thermal Stability of Schottky Contacts on Strained AlGaN/GaN Heterostructures”, Applied Physics Letters, vol. 84, pp. 1585-1587, 2004.

7.     Z. Lin, W. Lu, J. Lee, D. Liu, “Influence of annealed ohmic contact metals on the polarization of A1GaN barrier layer”, Electronics Letters, vol. 39, pp.1412-1414, Sept. 18, 2003 .

8.     J. Lee, D. Liu, Z. Lin, W. Lu, J. S. Flynn, and G. R. Brandes, “Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate”, Solid State Electronics, vol.47, pp. 2081-2084, November 2003.

9.     Z. Lin, W. Lu, J. Lee, D. Liu, and G. R. Brandes, “Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: determination and effect of metal work functions,” Appl. Phys. Lett., vol. 82, pp. 4364 – 4366, June 2003.

10.    W. Lu, V. Kumar, E. Piner, and I. Adesida, “DC, RF, and microwave noise performance of AlGaN/GaN field effect transistors dependence of aluminum concentration,” IEEE Trans. Electron Devices, vol. 50, pp. 1069-1074, April, 2003.

11.    W. Lu, R. Schwindt, V. Kumar, E. Piner, and I. Adesida, “DC, RF, and microwave noise performances of AlGaN/GaN HEMT’s on sapphire substrates,” IEEE Trans. Microw. Theory Tech., vol. 49, pp. 2499 – 2504, 2002.

12.    S. L. Rommel, J. H. Jang, W. Lu, G. Cueva, L. Zhou, I. Adesida, G. Pajer, R. Whaley, A. Lepore, Z. Schellanbarger, and J. H. Abeles, “The Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma-reactive ion etching chemistries for photonic device fabrication,” J. Vac. Sci. Technol. B, vol. 20, pp. 1327-1330, 2002.

13.    V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, “AlGaN/GaN high electron mobility transistors on SiC with fT of over 120 GHz,” IEEE Electron Device Lett., vol. 23, pp. 455-457, 2002.

14.    W. Lu, V. Kumar, R. Schwindt, E. Piner, and I. Adesida, A comparative study of surface passivation on AlGaN/GaN HEMTs, Solid State Electronics 46, (2002) 1441-1444.

15.    C. Lee, W. Lu, E. Piner, and I. Adesida, DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE, Solid State Electronics 46, (2002) 743-746.

16.    V. Kumar, W. Lu, F.A. Khan, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, High performance 0.25 mm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm, Electronics Lett. 38, (2002) 252-253.

17.    V. Kumar, W. Lu, F.A. Khan, R. Schwindt, E. Piner, and I. Adesida, Recessed 0.25 mm gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE, Electronics Lett. 37, (2001) 1483-1485.

18.    V. Kumar, W. Lu, R. Schwindt, J. Van Hove, P. Chow, and I. Adesida, 0.25 mm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT, Electronics Lett. 37, (2001) 858-859.

19.    W. Lu, J. W. Yang, M. Asif Khan, and I. Adesida, AlGaN/GaN HEMT’s on SiC with over 100 GHz fT and low microwave noise, IEEE Trans. Electron Devices, 48, (2001) 581-585.

20.    W. Lu, S. Koester, X.W. Wang, J.O. Chu, T.P. Ma, and I. Adesida, Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths, J. Vac. Sci. Technol. B, 18 (2000) 3488-3492.

21.    W. Lu, A. Kuliev, S. Koester, X.W. Wang, J.O. Chu, T.P. Ma, and I. Adesida, High performance 0.1 mm gate-length p-type SiGe MODFETs and MOS-MODFETs, IEEE Trans. Electron Devices, 47, (2000) 1645-1652.

22.    W. Lu, X.W. Wang, R. Hammond, A. Kuliev, S. Koester, J.O. Chu, K. Ismail, T.P. Ma, and I. Adesida, p-type SiGe transistors with low gate leakage using SiN gate dielectric, IEEE Electron Dev. Lett., 20, (1999) 514-516.

23.    W. Lu, K. Prasad, G. I. Ng, J. H. Lee, and P. Lindstrom, Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room temperature photoluminescence spectra, J. Phys. D: Appl. Phys. 31, (1998) 159-164.

24.    W. Lu, G. I. Ng, B. Jogai, J. H. Lee, and C. S. Park, Identification of room temperature photoluminescence in pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wells, J. Appl. Phys. 82, (1997) 1345-1349.

25.    W. Lu, N. Gu, Y. Wei, and Y.C. Tian, Ultrathin resist patterning by a synchrotron radiation lithography system, Vacuum, 48, (1997) 103-105.

26.    W. Lu, J. H. Lee, H. S. Yoon, C. S. Park, K. E. Pyun, H. G. Lee, K. S. Suh, B. Jogai, Room temperature photoluminescence studies of delta-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures, Solid State Comm. 99, (1996) 713-716.

27.    W. Lu, H.Y. Shen, N. Gu, J.H. Lee, C.S. Park, and Y. Wei, Fabrication and microwave response of YBaCuO superconductive thin film nanobridges, Jpn. J. Appl. Phys., 34 (1995) L1644-L1646.

28.    N. Gu, X.M. Yang, H.Y. Shen, W. Lu, and Y. Wei, Electrical switch properties of CuTCNQ organic thin film, Synthetic Metals, 71 (1995) 2221-2222.

29.    W. Lu, N. Gu, Z.H. Lu, X.M. Yang, and Y. Wei, Langmuir-Blodgett resist films for microlithography by exposure to a scanning electron microscope, Thin Solid Films, 242 (1994) 178-182.

30.    W. Lu, H.Y. Shen, N. Gu, C.W. Yuan, Z.H. Lu, and Y. Wei, Superiority of Langmuir-Blodgett resist films in electron beam lithography as demonstrated by the backscattering yield, Thin Solid Films, 243 (1994) 501-504.

31.    W. Lu, N. Gu, Z.H. Lu, and Y. Wei, An investigation of the backscattering yield of Langmuir-Blodgett resist films in electron beam lithography, Modeling Simul. Mater. Sci. Eng. , 2 (1994) 913-920.

32.    N. Gu, W. Lu, S.M. Pang, C.W. Yuan, and Y. Wei, Photovoltaic effect in CuTCNQ organic thin films, Thin Solid Films, 243 (1994) 468-471.

33.    W. Lu, J.X. Tao, N. Gu, Proximity effect correction data processing system for electron beam lithography, J. Vac. Sci. Technol. B, 11(1993) 1906-1907.

34.    Z.H. Lu, J.Y. Fang, N. Gu, W. Lu, Y. Wei, and P. Stroeve, Monolayer compressed by steady laminar flowing subphase, J. Colloid Interface Sci., 156 (1993) 462-466.

35.    N. Gu, W. Lu, and Y. Wei, Nanometer-sized passageways within CuTCNQ crystalline grains prepared by spontaneous electrolyses, Chin. Sci. Bulletin, 40 (1995) 962-966.

36.    X.M. Yang, N. Gu, W. Lu, Z.H. Lu, and Y. Wei, Structure study of polymethylmethacrylate Langmuir-Blodgett monolayers by atom force microscopy, Chin. Sci. Bulletin, 40 (1995) 145-149.