List of Selected Journal Papers
1.
Hyeongnam
Kim, Jaesun Lee, and Wu Lu, “Trap behavior in AlGaN/GaN HEMTs by
post-gate-annealing,” accepted by International Journal of High Speed
Electronics and Systems.
2.
Jaesun Lee,
Dongmin Liu, Hyeongnam Kim, Michael L. Shuette, Wu Lu, Jeffrey S. Flynn, and
Georege R. Brandes, “Fabrication of self-aligned T-gate AlGaN/GaN high
electron mobility transistors,” accepted by International Journal of High
Speed Electronics and Systems.
3.
Jaesun Lee,
Dongmin Liu, Hyeongnam Kim, Michael L. Shuette, Wu Lu, Jeffrey S. Flynn, and
Georege R. Brandes “Self-Aligned AlGaN/GaN High Electron Mobility
Transistors”, Electronics Letters, 2004 (in press)
4.
Jaesun Lee,
Dongmin Liu, Hyeongnam Kim, and Wu Lu, “Post-Processing annealing Effects on
Direct Current and Microwave Performace of AlGaN/GaN High Electron Mobility
Transistors”, Applied Physics Letters,
vol. 85, pp., 2004. (in press)
5.
J. Lee, D.
Liu, and W. Lu, “Post Annealing Effects on Device Performance of AlGaN/GaN
HFETs”,
6.
Z. Lin, H.
Kim, J. Lee, and W. Lu, “Thermal Stability of Schottky Contacts on Strained
AlGaN/GaN Heterostructures”, Applied
Physics Letters, vol. 84, pp. 1585-1587, 2004.
7.
Z. Lin, W.
Lu, J. Lee, D. Liu, “Influence of annealed ohmic contact metals on the
polarization of A1GaN barrier layer”, Electronics
Letters, vol. 39, pp.1412-1414,
8.
J. Lee,
D. Liu, Z. Lin, W. Lu, J. S. Flynn,
and G. R. Brandes, “Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire
substrate”, Solid State Electronics,
vol.47, pp. 2081-2084, November 2003.
9.
Z. Lin, W.
Lu, J. Lee, D. Liu, and G. R. Brandes, “Barrier
heights of Schottky contacts on strained AlGaN/GaN heterostructures:
determination and effect of metal work functions,” Appl.
Phys. Lett., vol. 82, pp. 4364 – 4366, June 2003.
10.
W. Lu,
V. Kumar, E. Piner, and I. Adesida, “DC, RF, and microwave noise performance
of AlGaN/GaN field effect transistors dependence of aluminum concentration,”
IEEE Trans. Electron Devices, vol. 50, pp. 1069-1074, April, 2003.
11.
W. Lu,
R. Schwindt, V. Kumar, E. Piner, and I. Adesida, “DC, RF, and microwave noise
performances of AlGaN/GaN HEMT’s on sapphire substrates,”
IEEE Trans. Microw. Theory Tech., vol.
49, pp. 2499 – 2504, 2002.
12.
S. L.
Rommel, J. H. Jang, W. Lu, G. Cueva, L. Zhou, I. Adesida, G. Pajer, R. Whaley,
A. Lepore, Z. Schellanbarger, and J. H. Abeles, “The Effect of H2
on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2
inductively coupled plasma-reactive ion etching chemistries for photonic device
fabrication,” J. Vac. Sci. Technol. B,
vol. 20, pp. 1327-1330, 2002.
13.
V.
Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and I.
Adesida, “AlGaN/GaN high electron mobility transistors on SiC with fT
of over 120 GHz,” IEEE Electron Device
Lett., vol. 23, pp. 455-457,
2002.
14.
W. Lu,
V. Kumar, R. Schwindt, E. Piner, and I. Adesida, A comparative study of surface
passivation on AlGaN/GaN HEMTs, Solid
State Electronics 46, (2002)
1441-1444.
15.
C. Lee,
W. Lu, E. Piner, and I. Adesida, DC and microwave performance of recessed-gate
GaN MESFETs using ICP-RIE, Solid State
Electronics 46, (2002) 743-746.
16.
V.
Kumar, W. Lu, F.A. Khan, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif
Khan, and I. Adesida, High performance 0.25 mm gate-length AlGaN/GaN HEMTs on sapphire with
transconductance of over 400 mS/mm, Electronics
Lett. 38, (2002) 252-253.
17.
V.
Kumar, W. Lu, F.A. Khan, R. Schwindt, E. Piner, and I. Adesida, Recessed 0.25 mm
gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE,
Electronics Lett. 37,
(2001) 1483-1485.
18.
V.
Kumar, W. Lu, R. Schwindt, J. Van Hove, P. Chow, and I. Adesida, 0.25 mm
gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT,
Electronics Lett. 37,
(2001) 858-859.
19.
W. Lu,
J. W. Yang, M. Asif Khan, and I. Adesida, AlGaN/GaN HEMT’s on SiC with over
100 GHz fT and low microwave noise,
IEEE Trans. Electron Devices, 48,
(2001) 581-585.
20.
W. Lu,
S. Koester, X.W. Wang, J.O. Chu, T.P. Ma, and I. Adesida, Comparative study of
self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor
modulation-doped field effect transistors with nanometer gate lengths, J.
Vac. Sci. Technol. B, 18 (2000)
3488-3492.
21.
W. Lu,
A. Kuliev, S. Koester, X.W. Wang, J.O. Chu, T.P. Ma, and I. Adesida, High
performance 0.1 mm
gate-length p-type SiGe MODFETs and MOS-MODFETs,
IEEE Trans. Electron Devices, 47,
(2000) 1645-1652.
22.
W. Lu,
X.W. Wang, R. Hammond, A. Kuliev, S. Koester, J.O. Chu, K. Ismail, T.P. Ma, and
I. Adesida, p-type SiGe transistors with low gate leakage using SiN gate
dielectric, IEEE Electron Dev. Lett., 20,
(1999) 514-516.
23.
W. Lu,
K. Prasad, G. I. Ng, J. H. Lee, and P. Lindstrom, Nondestructive determination
of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron
mobility transistor structures by room temperature photoluminescence spectra, J. Phys. D: Appl. Phys. 31,
(1998) 159-164.
24.
W. Lu,
G. I. Ng, B. Jogai, J. H. Lee, and C. S. Park, Identification of room
temperature photoluminescence in pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs
quantum wells, J. Appl. Phys. 82, (1997) 1345-1349.
25.
W. Lu,
N. Gu, Y. Wei, and Y.C. Tian, Ultrathin resist patterning by a synchrotron
radiation lithography system, Vacuum, 48, (1997) 103-105.
26.
W. Lu,
J. H. Lee, H. S. Yoon, C. S. Park, K. E. Pyun, H. G. Lee, K. S. Suh, B. Jogai,
Room temperature photoluminescence studies of delta-doped pseudomorphic high
electron mobility transistor AlGaAs/InGaAs/GaAs structures, Solid
State Comm. 99, (1996) 713-716.
27.
W. Lu, H.Y. Shen, N. Gu, J.H. Lee, C.S. Park, and Y. Wei,
Fabrication and microwave response of YBaCuO superconductive thin film
nanobridges, Jpn. J. Appl. Phys., 34
(1995) L1644-L1646.
28.
N. Gu,
X.M. Yang, H.Y. Shen, W. Lu, and Y. Wei, Electrical switch properties of CuTCNQ
organic thin film, Synthetic Metals, 71
(1995) 2221-2222.
29.
W. Lu, N. Gu, Z.H. Lu, X.M. Yang, and Y. Wei,
Langmuir-Blodgett resist films for microlithography by exposure to a scanning
electron microscope, Thin Solid Films,
242 (1994) 178-182.
30.
W. Lu, H.Y. Shen, N. Gu, C.W. Yuan, Z.H. Lu, and Y. Wei,
Superiority of Langmuir-Blodgett resist films in electron beam lithography as
demonstrated by the backscattering yield, Thin
Solid Films, 243 (1994) 501-504.
31.
W. Lu, N. Gu, Z.H. Lu, and Y. Wei, An investigation of
the backscattering yield of Langmuir-Blodgett resist films in electron beam
lithography, Modeling Simul. Mater. Sci.
32.
N. Gu, W.
Lu, S.M. Pang, C.W. Yuan, and Y. Wei, Photovoltaic effect in CuTCNQ organic thin
films, Thin Solid Films, 243 (1994) 468-471.
33.
W. Lu, J.X. Tao, N. Gu, Proximity effect correction data
processing system for electron beam lithography, J. Vac. Sci. Technol. B, 11(1993)
1906-1907.
34.
Z.H. Lu, J.Y.
Fang, N. Gu, W. Lu, Y. Wei, and P. Stroeve, Monolayer compressed by steady
laminar flowing subphase, J. Colloid
Interface Sci., 156 (1993)
462-466.
35.
N. Gu, W.
Lu, and Y. Wei, Nanometer-sized passageways within CuTCNQ crystalline grains
prepared by spontaneous electrolyses, Chin.
Sci. Bulletin, 40 (1995) 962-966.
36.
X.M. Yang,
N. Gu, W. Lu, Z.H. Lu, and Y. Wei, Structure study of polymethylmethacrylate
Langmuir-Blodgett monolayers by atom force microscopy, Chin.
Sci. Bulletin, 40 (1995) 145-149.